作者：Ding, Jian.
出版項：UMI, 1990.
載體形態：
分類號：
語種：英文
關鍵詞：refractory,thermal stability,electrical properties
內容簡介Further improvement of electrical properties and thermal stability of reactively sputtered refractory metal nitride contacts on GaAs and In-based ohmic contacts to GaAs require a systematic study of the relationships between structural and electrical characteristics at the interface. In this study, the interface morphologies and structures of Nb/GaAs, NbN/GaAs, TiN/GaAs, WN/GaAs and In/GaAs contacts have been investigated before and after annealing at temperature up to 950$/sp/circ$C by transmis
所需耐材幣：0
