作者：Niu, JJ;Wang, JN;
作者單位：Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200030, Peoples R China
刊名：Chemical vapor deposition
ISSN：0948-1907
出版年：2007-01-05
卷：13
期：8
起頁：396
止頁：400
分類號：TQ175
語種：英文
關(guān)鍵詞：crystal growth;high purity;Si3N4 nanowires;NITRIDE NANOWIRES;CARBOTHERMAL REDUCTION;ALPHA-SI3N4;SI3N4;WHISKERS;FIBERS;EVAPORATION;NANOCABLES;SCATTERING;RAMAN;
內(nèi)容簡介Bundles of single-crystalline beta-Si3N4 nanowires with high purity are successfully synthesized using a simple CVD process with silicon nanowire(SiNW)-assisted growth. The beta-Si3N4 NWs obtained have a small diameter of similar to 30 nm, a single-crystalline structure with [100] or [101] direction, and a thin oxide shell. The photoluminescence and Raman scattering spectra confirm the good crystalline structure. The weak blue-shift of the peaks in Raman scattering compared to bulk beta-Si3N4 is attributed to the phonon confinement effect or laser heating during the measurements. Finally, a possible SiNWs template-assisted growth model is suggested.
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