作者：AKIHISA KOMADA;HAYATO;MAKOTO;
作者單位：New Material Development Division, Taiko Refractories Co., Ltd. 1-1, Makiyama-Shinmachi, Tobata-ku, Kitakyushu-city, 804-0054
刊名：Journal of the Technical Association of Refractories
ISSN：0285-0028
出版年：2004-01-05
卷：24
期：2
起頁：125
止頁：129
分類號：TQ175
語種：英文
關鍵詞：
內容簡介With its excellent heat resistance, silicon nitride have attracted much attention as high temperature structural materials. When used at high temperatures for a long time, however, Si_3N_4 suffers from thermal degradation and its properties deteriorate ~1)~(-3). In situ diagnosis of such degradation is difficult when heat resistant parts made of Si_3N_4 are located within a high temperature apparatus. In the present study, we attempted to make Si_3N_4, an electric insulator, a conductor so that we might be able to diagnose its high temperature degradation by measuring changes in its electrical conductivity. For this purpose, we prepared Si_3N_4-SiC composites ~4)~(-6)) with various Si_3N_4-SiC ratios by using submicron powders and pressureless sintering.
所需耐材幣：0
